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adapted gds layermap from open source layers
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felicia_guo
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May 30, 2024
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#Layer Name Layer Purpose Layer Stream Number Datatype Stream Number | ||
diff drawing 65 20 Active (diffusion) area (type opposite of well/substrate underneath) | ||
tap drawing 65 44 Active (diffusion) area (type equal to the well/substrate underneath) (i.e. N+ and P+) | ||
nwell drawing 64 20 N-well region | ||
dnwell drawing 64 18 Deep n-well region | ||
pwbm drawing 19 44 Regions (in UHVI) blocked from p-well implant (DE MOS devices only) | ||
pwde drawing 124 20 Regions to receive p-well drain-extended implants | ||
hvtr drawing 18 20 High-Vt RF transistor implant | ||
hvtp drawing 78 44 High-Vt LVPMOS implant | ||
ldntm drawing 11 44 N-tip implant on SONOS devices | ||
hvi drawing 75 20 High voltage (5.0V) thick oxide gate regions | ||
tunm drawing 80 20 SONOS device tunnel implant | ||
lvtn drawing 125 44 Low-Vt NMOS device | ||
poly drawing 66 20 Polysilicon | ||
hvntm drawing 125 20 High voltage N-tip implant | ||
nsdm drawing 93 44 N+ source/drain implant | ||
psdm drawing 94 20 P+ source/drain implant | ||
rpm drawing 86 20 300 ohms/square polysilicon resistor implant | ||
urpm drawing 79 20 2000 ohms/square polysilicon resistor implant | ||
npc drawing 95 20 Nitride poly cut (under licon1 areas) | ||
licon1 drawing 66 44 Contact to local interconnect | ||
li1 drawing 67 20 Local interconnect | ||
mcon drawing 67 44 Contact from local interconnect to metal1 | ||
met1 drawing 68 20 Metal 1 | ||
via drawing 68 44 Contact from metal 1 to metal 2 | ||
met2 drawing 69 20 Metal 2 | ||
via2 drawing 69 44 Contact from metal 2 to metal 3 | ||
met3 drawing 70 20 Metal 3 | ||
via3 drawing 70 44 Contact from metal 3 to metal 4 | ||
met4 drawing 71 20 Metal 4 | ||
via4 drawing 71 44 Contact from metal 4 to metal 5 | ||
met5 drawing 72 20 Metal 5 | ||
pad drawing 76 20 Passivation cut (opening over pads) | ||
nsm drawing 61 20 Nitride seal mask | ||
capm drawing 89 44 MiM capacitor plate over metal 3 | ||
cap2m drawing 97 44 MiM capacitor plate over metal 4 | ||
vhvi drawing 74 21 12V nominal (16V max) node identifier | ||
uhvi drawing 74 22 20V nominal node identifier | ||
npn drawing 82 20 Base region identifier for NPN devices | ||
inductor drawing 82 24 Identifier for inductor regions | ||
capacitor drawing 82 64 Identifier for interdigitated (vertical parallel plate (vpp)) capacitors | ||
pnp drawing 82 44 Base nwell region identifier for PNP devices | ||
LVSprune drawing 84 44 Exemption from LVS check (used in e-test modules only) | ||
ncm drawing 92 44 N-core implant | ||
padCenter drawing 81 20 Pad center marker | ||
target drawing 76 44 Metal fuse target | ||
areaid.sl identifier 81 1 Seal ring identifier | ||
areaid.ce identifier 81 2 Memory (SRAM) core cell identifier | ||
areaid.fe identifier 81 3 Pads in padframe identifier | ||
areaid.sc identifier 81 4 Standard cell identifier | ||
areaid.sf identifier 81 6 Signal pad diffusion identifier (for latchup DRC checks) | ||
areaid.sl identifier 81 7 Signal pad well identifier (for latchup DRC checks) | ||
areaid.sr identifier 81 8 Signal pad metal (for latchup DRC checks) | ||
areaid.mt identifier 81 10 Location of e-test modules within the frame | ||
areaid.dt identifier 81 11 Location of dice within the frame | ||
areaid.ft identifier 81 12 Boundary of the frame | ||
areaid.ww identifier 81 13 Waffle window (used to prevent waffle shifting) | ||
areaid.ld identifier 81 14 Low tap density (15um between taps) area. Must be at least 50um from padframe | ||
areaid.ns identifier 81 15 Non-critical side. Blocks stress DRC rules | ||
areaid.ij identifier 81 17 Identification for areas susceptible to injection | ||
areaid.zr identifier 81 18 Zener diode identifier | ||
areaid.ed identifier 81 19 ESD device identifier | ||
areaid.de identifier 81 23 Diode identifier | ||
areaid.rd identifier 81 24 RDL probe pad (not used in this process) | ||
areaid.dn identifier 81 50 Dead zone (used in seal ring only for stress DRC) | ||
areaid.cr identifier 81 51 Critical corner (used in seal ring only for stress DRC) | ||
areaid.cd identifier 81 52 Critical side (used in seal ring only for stress DRC) | ||
areaid.st identifier 81 53 Substrate cut. Idendifies areas to be considered as isolated substrate | ||
areaid.op identifier 81 54 OPC drop. Block automatic OPC (for fab blocks and lithocal structures) | ||
areaid.en identifier 81 57 Extended drain identifier | ||
areaid.en20 identifier 81 58 20V Extended drain identifier | ||
areaid.le identifier 81 60 3.3V native NMOS identifier (absence indicates a 5V native NMOS) | ||
areaid.hl identifier 81 63 HV nwell. Identifies nwells with thin oxide devices connected to high voltage | ||
areaid.sd identifier 81 70 subcircuit identifier (for LVS extraction) | ||
areaid.po identifier 81 81 Photodiode device identifier | ||
areaid.it identifier 81 84 IP exempt from DFM rules | ||
areaid.et identifier 81 101 e-test module identifier | ||
areaid.lvt identifier 81 108 Low-Vt identifier | ||
areaid.re identifier 81 125 RF diode identifier | ||
fom dummy 22 23 | ||
poly gate 66 9 | ||
poly model 66 83 (Text type) | ||
poly resistor 66 13 | ||
diff resistor 65 13 | ||
pwell resistor 64 13 | ||
li1 resistor 67 13 | ||
diff hv 65 8 | ||
met4 fuse 71 17 | ||
inductor terminal1 82 26 | ||
inductor terminal2 82 27 | ||
inductor terminal3 82 28 | ||
li1 block 67 10 | ||
met1 block 68 10 | ||
met2 block 69 10 | ||
met3 block 70 10 | ||
met4 block 71 10 | ||
met5 block 72 10 | ||
prBndry boundary 235 4 | ||
diff boundary 65 4 | ||
tap boundary 65 60 | ||
mcon boundary 67 60 | ||
poly boundary 66 4 | ||
via boundary 68 60 | ||
via2 boundary 69 60 | ||
via3 boundary 70 60 | ||
via4 boundary 71 60 | ||
li1 label 67 5 (Text type) | ||
met1 label 68 5 (Text type) | ||
met2 label 69 5 (Text type) | ||
met3 label 70 5 (Text type) | ||
met4 label 71 5 (Text type) | ||
met5 label 72 5 (Text type) | ||
poly label 66 5 (Text type) | ||
diff label 65 6 (Text type) | ||
pwell label 64 59 (Text and data type) | ||
pwelliso label 44 5 (Text type) | ||
pad label 76 5 (Text type) | ||
tap label 65 5 | ||
nwell label 64 5 | ||
inductor label 82 25 | ||
text label 83 44 (Text type) | ||
li1 net 67 23 (Text type) | ||
met1 net 68 23 (Text type) | ||
met2 net 69 23 (Text type) | ||
met3 net 70 23 (Text type) | ||
met4 net 71 23 (Text type) | ||
met5 net 72 23 (Text type) | ||
poly net 66 23 (Text type) | ||
diff net 65 23 (Text type) | ||
li1 pin 67 16 (Text and data) | ||
met1 pin 68 16 (Text and data) | ||
met2 pin 69 16 (Text and data) | ||
met3 pin 70 16 (Text and data) | ||
met4 pin 71 16 (Text and data) | ||
met5 pin 72 16 (Text and data) | ||
poly pin 66 16 (Text and data) | ||
diff pin 65 16 (Text and data) | ||
nwell pin 64 16 (Text type) | ||
pad pin 76 16 (Text and data) | ||
pwell pin 122 16 (Text and data) | ||
pwelliso pin 44 16 (Text and data) | ||
nwell pin 64 0 (Text type) | ||
poly pin 66 0 (Text type) | ||
li1 pin 67 0 (Text type) | ||
met1 pin 68 0 (Text type) | ||
met2 pin 69 0 (Text type) | ||
met3 pin 70 0 (Text type) | ||
met4 pin 71 0 (Text type) | ||
met5 pin 72 0 (Text type) | ||
pad pin 76 0 (Text type) | ||
pwell pin 122 0 (Text type) | ||
diff cut 65 14 | ||
poly cut 66 14 | ||
li1 cut 67 14 | ||
met1 cut 68 14 | ||
met2 cut 69 14 | ||
met3 cut 70 14 | ||
met4 cut 71 14 | ||
met5 cut 72 14 | ||
pwell cut 64 14 | ||
met5 probe 72 25 | ||
met4 probe 71 25 | ||
met3 probe 70 25 | ||
met2 probe 69 25 | ||
met1 probe 68 25 | ||
li1 probe 67 25 | ||
poly probe 66 25 | ||
poly short 66 15 | ||
li1 short 67 15 | ||
met1 short 68 15 | ||
met2 short 69 15 | ||
met3 short 70 15 | ||
met4 short 71 15 | ||
met5 short 72 15 | ||
#Mask level data | ||
cncm mask 17 0 N-core implant mask | ||
crpm mask 96 0 Resistor Protect mask | ||
cpdm mask 37 0 Pad mask | ||
cnsm mask 22 0 Nitride seal mask | ||
cmm5 mask 59 0 Metal 5 mask | ||
cviam4 mask 58 0 Via 4 mask | ||
cmm4 mask 51 0 Metal 4 mask | ||
cviam3 mask 50 0 Via 3 mask | ||
cmm3 mask 34 0 Metal 3 mask | ||
cviam2 mask 44 0 Via 2 mask | ||
cmm2 mask 41 0 Metal 2 mask | ||
cviam mask 40 0 Via mask | ||
cmm1 mask 36 0 Metal 1 mask | ||
ctm1 mask 35 0 Contact mask | ||
cli1m mask 56 0 Local interconnect mask | ||
clicm1 mask 43 0 Local interconnect contact mask | ||
cpsdm mask 32 0 P+ Implant mask | ||
cnsdm mask 30 0 N+ Implant mask | ||
cldntm mask 11 0 Lightly-doped N-tip implant mask | ||
cnpc mask 49 0 Nitride poly cut mask | ||
chvntm mask 39 0 High voltage N-tip implant mask | ||
cntm mask 27 0 N-tip implant mask | ||
cp1m mask 28 0 Poly 1 mask | ||
clvom mask 46 0 Low Voltage oxide mask | ||
conom mask 88 0 ONO Mask | ||
ctunm mask 20 0 Tunnel mask | ||
chvtrm mask 98 0 HLow VT PCh Radio mask | ||
chvtpm mask 97 0 High Vt Pch mask | ||
clvtnm mask 25 0 Low Vt Nch mask | ||
cnwm mask 21 0 Nwell mask | ||
cdnm mask 48 0 Deep nwell mask | ||
cfom mask 23 0 Field oxide mask | ||
cfom drawing 22 20 | ||
clvtnm drawing 25 44 | ||
chvtpm drawing 88 44 | ||
conom drawing 87 44 | ||
clvom drawing 45 20 | ||
cntm drawing 26 20 | ||
chvntm drawing 38 20 | ||
cnpc drawing 44 20 | ||
cnsdm drawing 29 20 | ||
cpsdm drawing 31 20 | ||
cli1m drawing 115 44 | ||
cviam3 drawing 112 20 | ||
cviam4 drawing 117 20 | ||
cncm drawing 96 44 | ||
cntm maskAdd 26 21 | ||
clvtnm maskAdd 25 43 | ||
chvtpm maskAdd 97 43 | ||
cli1m maskAdd 115 43 | ||
clicm1 maskAdd 106 43 | ||
cpsdm maskAdd 31 21 | ||
cnsdm maskAdd 29 21 | ||
cp1m maskAdd 33 43 | ||
cfom maskAdd 22 21 | ||
cntm maskDrop 26 22 | ||
clvtnm maskDrop 25 42 | ||
chvtpm maskDrop 97 42 | ||
cli1m maskDrop 115 42 | ||
clicm1 maskDrop 106 42 | ||
cpsdm maskDrop 31 22 | ||
cnsdm maskDrop 29 22 | ||
cp1m maskDrop 33 42 | ||
cfom maskDrop 22 22 | ||
cmm4 waffleDrop 112 4 | ||
cmm3 waffleDrop 107 24 | ||
cmm2 waffleDrop 105 52 | ||
cmm1 waffleDrop 62 24 | ||
cp1m waffleDrop 33 24 | ||
cfom waffleDrop 22 24 | ||
cmm5 waffleDrop 117 4 |